Broad gain spectrum light sources such as widely tunable semiconductor lasers are attractive for a wide range of applications including precision measurement, biomedical treatment, and environment monitoring. Furthermore, broadband lasers emitting in the 1.55 µm region are of great interest for fiber-optic communication applications such as dense wavelength division multiplexing system. Self-assembled quantum dots (QDs) grown in the Stranski-Krastanow mode are ideal candidates for broad gain spectrum medium, which usually have a large inhomogeneous broadening resulting from the random distribution of the QDs on their growth surface, e.g., the photoluminescence linewidth from the self-assembled InAs/InP QDs is typically greater than 200 nm [1]. This large inhomogeneous broadening is beneficial to broaden the gain spectrum of QD devices. In this talk, I will present our works on the development of broad gain spectrum InAs/InP QD materials and laser devices including ultra-broadband tunable InAs/InP QD external cavity lasers [2, 3], ultrashort pulse InAs/InP QD single-section mode-locked lasers with high output power [4, 5], and flat-topped ultrabroad stimulated emission InAs/InP QD lasers [6].

© 2019 Japan Society of Applied Physics, The Optical Society (OSA)

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription