We report the demonstration of a thin-film LiNbO3 modulator with modulation data rate up to 112 Gb/s (56 Gbaud PAM4). The MZI modulator exhibits an electro-optic phase efficiency of V⋅L=2.6V⋅cm and a 6 dB electro-optic bandwidth exceeding 60 GHz.

© 2019 The Author(s)

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